SABAGHI, Masoud. Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction. HOLOS, [S. l.], v. 1, p. 1–12, 2020. DOI: 10.15628/holos.2020.8378. Disponível em: https://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8378. Acesso em: 3 maio. 2024.